1)       Gallium Desorption Kinetics on (0001) GaN Surface During the growth of GaN by Molecular Beam Epitaxy
L. He, Y. T. Moon, J. Xie, M. Muñoz, D. Johnstone, and H. Morkoç
App. Phys. Lett. (Submitted, February, 2005)

1)       Electroreflectance spectroscopy in self-assembled quantum dots:lens symmetry
A. H. Rodríguez, C. Trallero-Giner, Martín Muñoz, and María C. Tamargo
Phys. Rev. B 72, 045304 (2005).

2)       Spectroscopy and carrier dynamics in CdSe self-assembled quantum dots embedded in ZnCdMgSe, G. Comanescu, W. Wang, S. Gundry, B. Das, R.R. Alfano, M.N. Perez-Paz, M.C. Tamargo, M. Muñoz, I. Popov, and L.L. Isaacs, Appl. Phys. Lett., 86, 253113 (2005).

3)       A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: effect of beryllium, Y. Gu, I. Kuskovsky, R. D. Robinson, I.P. Herman, G. F. Neumark, X. Zhou, S. P. Guo, M. Muñoz, M. C. Tamargo, Solid state comm. 134, 677(2005).

4)       Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible light emitters, M. N. Perez Paz, X. Zhou, M. Muñoz, M. Sohel, H. Lu, F. Fernandez, and M. C. Tamargo
J. Vacuum Sci. and Tech. B 23, 1236 (2005)

5)       Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP [001] by molecular-beam epitaxy, M. Sohel, X. Zhou, H. Lu, N. Perez, M. Tamargo and M. Muñoz
J. Vacuum Sci. and Tech. B 23, 1209 (2005)

6)       Effect of Beryllium concentration on the size of self-assembled CdSe quantum dots grown on Zn_1-xBe_xSe by molecular-beam epitaxy, X. Zhou, M. C. Tamargo, M. Muñoz, H. Liu, A. Couzis, C. Maldarelli, and Y. S. Huang.
J. Vacuum Sci. and Tech. B 23, 1212(2005).

7)      Hanle Effect Measurements of Spin Lifetime in Zn_0.4Cd_0.6Se Epilayers Grown on InP.
O. Maksimov, H. Lu, Martin Muñoz, M. C. Tamargo, and N. Samarth,
Journal of Superconductivity: Incorporating Novel Magnetism (JOSC), To be published, May 2005.

8)      CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum.
M. N. Perez Paz, X. Zhou, M. Muñoz, H. Lu, M. Sohel, M. C. Tamargo, F. Jean-Mary and D. L. Akins
App. Phys. Lett. 85, 6395 (2004).

9)       Molecular Beam Epitaxial Growth and Characterization of Zincblende ZnMgSe on InP (001).
M. Sohel, M. Muñoz, and M. C. Tamargo
App. Phys. Lett. 85, 2794 (2004).

10)    Efficient free exciton emission at room temperature in Zn_0.5Cd_0.5Se/Mg_xZn_yCd_1-x-ySe quantum wells,
O. Maksimov, N. Samarth, H. Lu, M. Muñoz, and M. C. Tamargo
Sol. State Comm. 132, 1 (2004).

11)    Reflectance and photoluminescence characterization of Be_xZn_1-xTe epilayers.
O. Maksimov, M. Muñoz, N. Samarth, M. C. Tamargo.
Thin Solid Films 467, 88 (2004).

12)    CdSe quantum dots grown on ZnSe and Zn_0.97Be_0.03Se by molecular-beam epitaxy: Optical studies.     X. Zhou, M. Muñoz, S. Guo, M. C. Tamargo, Y. Gu, I. L. Kuskovsky, and G. F. Neumark. J. Vacuum Sci. and Tech. B 22, 1518 (2004).

13)    Determination and Modeling of the Optical Constants of direct band gap Be_xZn_(1-x)Te grown by Molecular Beam Epitaxy.    M. Muñoz, O. Maksimov, M. C. Tamargo, M.R. Buckley and F.C. Peiris.    Phys. Status Solidi (c) 1, 706 (2004).

14)    Temperature dependence of the energy gap of Mg_xZn_yCd_1-x-ySe alloy. 
O. Maksimov , M Muñoz, W. H. Wang, M. C. Tamargo, N. Samarth.
Phys. Status Solidi (b) 241, R5 (2004).

15)    Blue photopumped lasing from Zn_x’Cd_y’Mg_1-x’-y’/ Zn_xCd_yMg_1-x-y single quantum well laser structure grown on InP substrate.    X. Zhou, M. Muñoz, M.C. Tamargo and Y. Chen.   
J. Appl. Phys. 95, 7 (2004).

16)    Contactless Electroreflectance Studies of II-VI Nanostructures Grown by Molecular Beam Epitaxy.    M. Muñoz, H. Lu, S.P. Guo, X. Zhou, M.C. Tamargo, F.H. Pollak, Y.S. Huang, C. Trallero-Giner and A.H. Rodríguez.    Phys. Status Solidi (b) 241, 546 (2004).

17)    Exciton localization in Mg_xZn_yCd_1-x-ySe alloy.    O. Maksimov, W.H. Wang, N. Samarth,
M. Muñoz and M.C. Tamargo.    Phys. Status Solidi (b) 241, 495 (2004).

18)    Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te.   
I.L. Kuskovsky, Y. Gu, M. van der Voort, G.F. Neumark, X. Zhou, M. Muñoz and M.C. Tamargo.    Phys. Status Solidi (b) 241, 527 (2004).

19)    Temperature dependence of the band-edge transitions of ZnCdBeSe.   
C.H. Hsieh and Y.S. Huang, C.H. Ho, K.K. Tiong, M. Muñoz, O. Maksimov and
M.C. Tamargo.    Japanese J. of Appl. Phys. 43, 459 (2004).

20)    Time resolved photoluminescence studies of Zn-Se-Te nano-structures with sub-monolayer quantities of Te grown by molecular beam epitaxy.  Y. Gu, I.L. Kuskovsky, M. van der Voort, G.F. Neumark, X. Zhou, M. Muñoz and M.C. Tamargo. Phys. Status Solidi (b) 241, 515 (2004).

21)    Optical properties of Zn_0.5Cd_0.5Se thin film grown on InP by molecular beam epitaxy.   
O. Maksimov, W.H. Wang and N. Samarth, M. Muñoz and M.C. Tamargo.   
Sol. State Comm. 128, 461 (2003).

22)    Contactless Electroreflectance of CdSe/ZnSe Quantum Dots Grown by Molecular Beam Epitaxy.    M. Muñoz, S.P. Guo, X. Zhou, M.C. Tamargo, Y.S. Huang, C. Trallero and A.H. Rodríguez.    App. Phys. Lett. 83, 4399 (2003).

23)    Band offset determination of Zn_0.53Cd_0.47Se/Zn_0.29Cd_0.24Mg_0.47Se.    M. Muñoz, H. Lu, X. Zhou, M.C. Tamargo and F.H. Pollak.    Appl. Phys. Lett., 83, 1995 (2003).

24)    Indices of refraction of Molecular-Beam Epitaxy-grown Be_xZn_1-xTe ternary alloys.   
F.C. Peiris, M.R. Buckley, O. Maksimov, M. Muñoz and M.C. Tamargo.    J. of Electron. Mat. 32, 742 (2003).

25)    Optical Constants of cubic GaN/GaAs(001): Experiment and Modeling.    M. Muñoz, Y.S. Huang, F.H. Pollak and H. Yang.    J. Appl. Phys., 93, 2549 (2003).

26)    Overlap Optimization in  semiconductors waveguides by bonding atomic rearrangement.    M. Muñoz and N.B. Patel.    IEEE. J. Quantum Electron. 39,787 (2003).

27)    Dielectric functions and critical points of Be_xZn_1-xTe alloys measured by spectroscopic ellipsometry.    M.R. Buckley, F.C. Peiris, O. Maksimov, M. Muñoz and M.C. Tamargo.   
App. Phys. Lett., 81, 5156 (2002).

28)    The Optical Constants of InGaAs/InP (001): Experiment and Modeling.    M. Muñoz, F.H. Pollak, M. Kahn, D. Ritter, L. Kronik and G.M. Cohen.    J. Appl. Phys., 92, 5878 (2002).

29)    Molecular beam epitaxy growth and properties of Be_xZn_1-xTe alloys for optoelectronic devices.    O. Maksimov, M. Muñoz, M.C. Tamargo, J. Lau and G.F. Neumark.   
J. Vacuum Sci. and Tech. B 20, 1278 (2002).

30)    Optical properties of BeCdSe/ZnCdMgSe strained quantum well structures.    O. Maksimov, S.P. Guo, Martín Muñoz and M.C. Tamargo.    J. Appl. Phys., 90, 5135 (2001).

31)    Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes.    B. Mishori, M. Muñoz, L. Mourokh and F.H. Pollak, J.P. DeBray, S. Ting and I. Ferguson.    Mat. Res. Soc. Symp. Proc. Vol 680E, E4.2.1, (2001).

32)    Burstein-Moss Shift of n-doped In_0.53Ga_0.47As/InP.    M. Muñoz, F.H. Pollak, M. Kahn, D. Ritter, L. Kronik and G.M. Cohen.    Phys. Rev. B, 63, 233302 (2001).

33)    Comment on “Photorreflectance study in the E₁ and E₁+D₁ transition regions of CdTe” by A. Kaneta and S. Adachi [J. Appl. Phys. 87, 7360 (2000)].    M. Muñoz, F.H. Pollak and T. Holden.    J. Appl. Phys. 89, N5, 3070 (2001).

34)    Comment on “Modeling the optical constants of GaAs: Excitonic effects at E₁, E₁+D₁ critical points” by A.B. Djurisic and E.H.Li [Semicon. Sci. and Tech. 14, 958 (1999)].   
M. Muñoz, F.H. Pollak and T. Holden.    Semicon. Sci. and Tech.; 16 281 (2001).

35)    Temperature Dependence of the Fundamental Band Gaps of GaInAsSb/GaSb and GaSb.   
M. Muñoz, F.H. Pollak and M.B. Zakia, N.B. Patel and J.L. Herrera.    Phys. Rev. B V62, N 24, 16600 (2000).

36)    Optical constants of Ga_1-xIn_xAs_ySb_1-y lattice-matched to GaSb (001): Experiment and Modeling.    M. Muñoz, K. Wei, F.H. Pollak, J.L. Freeouf, C.A. Wang and G.W. Charache.   
J. Appl. Phys. V87, N4, 1780 (2000).

37)    Surface Photovoltage Spectroscopy and Contacless Electroreflectance Characterization of GaInP/GaAs Heterojunction Bipolar Transistor Structure.    L. Malikova, B. Mishori, L. Mourokh, M. Muñoz, F.H. Pollak, P. Cooke, E. Armour, S. Sun and J. Silver.    Proc. of the 2000 IEEE Int. Symp. on Compound Semicon. Monterrey CA, Oct/2000. 19 (2000).

38)    Modeling the Optical constants of Diamond and Zincblende-Type Semiconductors: Discrete Exciton Effects at E₀ and E₁.    F.H. Pollak, M. Muñoz, T. Holden, K. Wei and V.M. Asnin.   
Phys. Status Solidi Vol. 215, No.1 33 (1999).

39)    Spectral Ellipsometry of GaSb: Experiment and Modeling.    M. Muñoz, K. Wei, F.H. Pollak, J.L. Freeouf and G.W. Charache.    Phys. Rev. B 60, 8105 (1999).

40)    Photoluminescence and Phoreflectance Studies in GaAs/Ga_1-xAl_xAs interfaces with a low Al contents.    L. Gomez, M. Muñoz, J.G. Mendoza, L. Tirado, H. Ariza and J.L. Herrera.   
Mexican J. of Phys., S3, 44, 236 (1998).

41)    Second Harmonic Generation in Semiconductor Waveguides by overlap optimization.   
M. Muñoz, J.G. Mendoza and N.B. Patel. Mexican J. of Phys., S3, 44, 45 (1998).

42)    Determination of GaSb refractive indexes using null ellipsometry and a prism.   
M. Muñoz, J.G. Mendoza, C.E.M. de Oliveira, M.B. Zakia and N.B. Patel.    J. of the Mexican Society of Vacuum 7, 70 (1997).

43)    Measurement of refractive index of GaSb (1.8 mm to 2.56 mm) using a prism.    M. Muñoz, C.E.M. de Oliveira, J.H. Clerice, R.S. Miranda, M.B. Zakia, M.M.G.de Carvalho and N.B. Patel.    Electron. Lett. 32, 262 (1996).

44)    Near-band-gap refractive index of GaSb.    M. Muñoz, R.S. Miranda, M.B. Zakia, C.F. de Souza, C.A. Ribeiro, J.H. Clerice and N.B. Patel.    Mat. Sci. & Eng. “B” B38, 259 (1996)

45)    Some topological questions on metrics of D type.    J. Plebañski, M. Muñoz and T. Matos.   
Mexican J. of Phys. 38, 1005 (1992).